Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures

Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures

Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogenei...

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Bibliographische Detailangaben
Hauptverfasser: Khlyap, G., Sydorchuk, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current measurement
Dielectric constant
Electrons
Electrooptic effects
Lattices
Modems
Numerical simulation
Optical films
Photonic band gap
Variable speed drives
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Beschreibung
Zusammenfassung:Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.
DOI:10.1109/ASDAM.2002.1088485