InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: theory and experiment

InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: theory and experiment

An overview of the different contributions due to carrier-induced effects that appear in InP/GaInAsP guided-wave phase modulators is given. The authors review and calculate the band-filling effect in such devices and point out optimized structures. The fabrication of phase modulators and directional...

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Veröffentlicht in:Journal of lightwave technology 1992-01, Vol.10 (1), p.63-70
Hauptverfasser: Vinchant, J.-F., Cavailles, J.A., Erman, M., Jarry, P., Renaud, M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
High speed optical techniques
Indium phosphide
Integrated optics. Optical fibers and wave guides
Optical and optoelectronic circuits
Optical fiber networks
Optical losses
Optical modulation
Optical polarization
Optical refraction
Optical switches
Optical waveguides
Phase modulation
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Zusammenfassung:An overview of the different contributions due to carrier-induced effects that appear in InP/GaInAsP guided-wave phase modulators is given. The authors review and calculate the band-filling effect in such devices and point out optimized structures. The fabrication of phase modulators and directional coupler switches based on a GaInAsP/InP heterostructure is described. These devices exhibit modulation characteristics in good agreement with the calculations having a phase modulation efficiency as high as 11 degrees /V mm and low optical losses.< >
ISSN:0733-8724
1558-2213
DOI:10.1109/50.108738