Topological Polarization Dynamics and Domain-Wall Tunneling Electroresistance Effects in Cylindrical-Shell Ferroelectrics

New insights into polarization dynamics in hafnium oxide-based ferroelectrics with cylindrical shell structures are presented based on a phase-field modeling. By introducing in-plane radial electric field, a center-type quadrant domain with charged domain wall can be created, which are topologically...

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Veröffentlicht in:IEEE electron device letters 2025-02, Vol.46 (2), p.179-182
Hauptverfasser: Chang, Pengying, Guo, Yirong, Xie, Mengyao, Li, Jie, Xie, Yiyang, Zeng, Lang
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container_end_page 182
container_issue 2
container_start_page 179
container_title IEEE electron device letters
container_volume 46
creator Chang, Pengying
Guo, Yirong
Xie, Mengyao
Li, Jie
Xie, Yiyang
Zeng, Lang
description New insights into polarization dynamics in hafnium oxide-based ferroelectrics with cylindrical shell structures are presented based on a phase-field modeling. By introducing in-plane radial electric field, a center-type quadrant domain with charged domain wall can be created, which are topologically protected owing to cylindrical geometrical confinement. More importantly, reversible switching of the four-quad domain between convergent and divergent states can be realized through the domain nucleation, growth and rotation processes, that are driven by domain wall motion, split and merge. Quantum transport calculation predicts the emergence of a domain-wall tunneling electro-resistance effect, due to the broken curvature symmetry between inner and outer boundaries. Furthermore, ferroelectric-antiferroelectric (FE-AFE) phase transition occurs with reduced radius of cylinder shell. These microscopic insights into connections between domain patterns and charge transports are helpful in designing three-dimensional ferroelectric devices.
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subjects Antiferroelectricity
cylindrical shell structure
Cylindrical shells
Domain walls
Electric fields
Electrodes
Ferroelectric
Ferroelectric materials
Hafnium oxide
Iron
Metals
Nonvolatile memory
Nucleation
Phase transitions
phase-field simulation
Polarization
Quantum transport
Switches
Three-dimensional displays
topological polarization
Tunneling
Voltage
title Topological Polarization Dynamics and Domain-Wall Tunneling Electroresistance Effects in Cylindrical-Shell Ferroelectrics
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