Topological Polarization Dynamics and Domain-Wall Tunneling Electroresistance Effects in Cylindrical-Shell Ferroelectrics

New insights into polarization dynamics in hafnium oxide-based ferroelectrics with cylindrical shell structures are presented based on a phase-field modeling. By introducing in-plane radial electric field, a center-type quadrant domain with charged domain wall can be created, which are topologically...

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Veröffentlicht in:IEEE electron device letters 2025-02, Vol.46 (2), p.179-182
Hauptverfasser: Chang, Pengying, Guo, Yirong, Xie, Mengyao, Li, Jie, Xie, Yiyang, Zeng, Lang
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Sprache:eng
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Zusammenfassung:New insights into polarization dynamics in hafnium oxide-based ferroelectrics with cylindrical shell structures are presented based on a phase-field modeling. By introducing in-plane radial electric field, a center-type quadrant domain with charged domain wall can be created, which are topologically protected owing to cylindrical geometrical confinement. More importantly, reversible switching of the four-quad domain between convergent and divergent states can be realized through the domain nucleation, growth and rotation processes, that are driven by domain wall motion, split and merge. Quantum transport calculation predicts the emergence of a domain-wall tunneling electro-resistance effect, due to the broken curvature symmetry between inner and outer boundaries. Furthermore, ferroelectric-antiferroelectric (FE-AFE) phase transition occurs with reduced radius of cylinder shell. These microscopic insights into connections between domain patterns and charge transports are helpful in designing three-dimensional ferroelectric devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3514114