A Watt-Level, 3.3-V Triple-Stack Switched Capacitor Digital PA in FinFET Technology
This work proposes and analyzes a new circuit topology that enables reliable triple-transistor stacking in the switched-capacitor digital power amplifier (SC-DPA) working from a 3.3-V supply, about three times the process maximum allowed voltage across the transistor nodes ( V_{D,\text{Max}} ). The...
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creator | Shay, Naor R. Socher, Eran Degani, Ofir |
description | This work proposes and analyzes a new circuit topology that enables reliable triple-transistor stacking in the switched-capacitor digital power amplifier (SC-DPA) working from a 3.3-V supply, about three times the process maximum allowed voltage across the transistor nodes ( V_{D,\text{Max}} ). The proposed topology employs capacitive feedback (CF) to meet device voltage constraints. Higher supply voltage usage results in reduced supply ripples and improved memory effects while allowing higher power watt-level SC-DPA. A 5-7-GHz, dual-core Doherty-like combining SC-DPA prototype was implemented and integrated into an all-digital polar transmitter (DPTX) using 16-nm FinFET CMOS technology. The SC-DPA demonstrates a maximum power ( P_{\text{max}} )/power efficiency (PE) of 30.15 dBm/34.7% at 5.2 GHz. An error vector magnitude (EVM)/power consumption of - 38 dB/830 mW is measured at 6.1-GHz and 9-dB BO (dBBO) from P_{\text{max}} , thus meeting MCS13 4096-QAM OFDM Wi-Fi7 requirement. The high-temperature operating life (HTOL) accelerating aging test was performed showing the ability to meet the expected lifetime of the device with only 0.5-dB P_{\text{max}} degradation. |
doi_str_mv | 10.1109/TMTT.2024.3509493 |
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The proposed topology employs capacitive feedback (CF) to meet device voltage constraints. Higher supply voltage usage results in reduced supply ripples and improved memory effects while allowing higher power watt-level SC-DPA. A 5-7-GHz, dual-core Doherty-like combining SC-DPA prototype was implemented and integrated into an all-digital polar transmitter (DPTX) using 16-nm FinFET CMOS technology. The SC-DPA demonstrates a maximum power (<inline-formula> <tex-math notation="LaTeX">P_{\text{max}}</tex-math> </inline-formula>)/power efficiency (PE) of 30.15 dBm/34.7% at 5.2 GHz. An error vector magnitude (EVM)/power consumption of <inline-formula> <tex-math notation="LaTeX">-</tex-math> </inline-formula>38 dB/830 mW is measured at 6.1-GHz and 9-dB BO (dBBO) from <inline-formula> <tex-math notation="LaTeX">P_{\text{max}}</tex-math> </inline-formula>, thus meeting MCS13 4096-QAM OFDM Wi-Fi7 requirement. The high-temperature operating life (HTOL) accelerating aging test was performed showing the ability to meet the expected lifetime of the device with only 0.5-dB <inline-formula> <tex-math notation="LaTeX">P_{\text{max}}</tex-math> </inline-formula> degradation.]]></description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2024.3509493</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitors ; Digital audio players ; Digital power amplifier (DPA) ; digital-to-time converter (DTC) ; DTX ; FinFETs ; Logic gates ; Multicore processing ; Performance evaluation ; polar TX ; Stress ; Topology ; Transistors ; Voltage ; Wi-Fi-7</subject><ispartof>IEEE transactions on microwave theory and techniques, 2024-12, p.1-11</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>socher@eng.tau.ac.il ; naor.shay@intel.com ; ofir.degani@intel.com</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10786492$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10786492$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shay, Naor R.</creatorcontrib><creatorcontrib>Socher, Eran</creatorcontrib><creatorcontrib>Degani, Ofir</creatorcontrib><title>A Watt-Level, 3.3-V Triple-Stack Switched Capacitor Digital PA in FinFET Technology</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description><![CDATA[This work proposes and analyzes a new circuit topology that enables reliable triple-transistor stacking in the switched-capacitor digital power amplifier (SC-DPA) working from a 3.3-V supply, about three times the process maximum allowed voltage across the transistor nodes (<inline-formula> <tex-math notation="LaTeX">V_{D,\text{Max}}</tex-math> </inline-formula>). The proposed topology employs capacitive feedback (CF) to meet device voltage constraints. Higher supply voltage usage results in reduced supply ripples and improved memory effects while allowing higher power watt-level SC-DPA. A 5-7-GHz, dual-core Doherty-like combining SC-DPA prototype was implemented and integrated into an all-digital polar transmitter (DPTX) using 16-nm FinFET CMOS technology. The SC-DPA demonstrates a maximum power (<inline-formula> <tex-math notation="LaTeX">P_{\text{max}}</tex-math> </inline-formula>)/power efficiency (PE) of 30.15 dBm/34.7% at 5.2 GHz. An error vector magnitude (EVM)/power consumption of <inline-formula> <tex-math notation="LaTeX">-</tex-math> </inline-formula>38 dB/830 mW is measured at 6.1-GHz and 9-dB BO (dBBO) from <inline-formula> <tex-math notation="LaTeX">P_{\text{max}}</tex-math> </inline-formula>, thus meeting MCS13 4096-QAM OFDM Wi-Fi7 requirement. The high-temperature operating life (HTOL) accelerating aging test was performed showing the ability to meet the expected lifetime of the device with only 0.5-dB <inline-formula> <tex-math notation="LaTeX">P_{\text{max}}</tex-math> </inline-formula> degradation.]]></description><subject>Capacitors</subject><subject>Digital audio players</subject><subject>Digital power amplifier (DPA)</subject><subject>digital-to-time converter (DTC)</subject><subject>DTX</subject><subject>FinFETs</subject><subject>Logic gates</subject><subject>Multicore processing</subject><subject>Performance evaluation</subject><subject>polar TX</subject><subject>Stress</subject><subject>Topology</subject><subject>Transistors</subject><subject>Voltage</subject><subject>Wi-Fi-7</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkM1KAzEUhYMoWKsPILjIA5jx5q8zWZZqVagoNOhySJObNjrOlJlB6dvboV24Ohw431l8hFxzyDgHc2dfrM0ECJVJDUYZeUJGXOucmUkOp2QEwAtmVAHn5KLrPvdVaShGZDmlH67v2QJ_sLqlMpPsndo2bStky975L7r8Tb3fYKAzt3U-9U1L79M69a6ib1OaajpP9fzBUot-UzdVs95dkrPoqg6vjjkmdj-YPbHF6-PzbLpg3hjOPEQdRIgYglYr5LmTWnNtUBjheNQ6eh6cg6A8jxBCIZw3Iq5iIWJA6eSY8MOtb5uuazGW2zZ9u3ZXcigHKeUgpRyklEcpe-bmwCRE_LfPi4kyQv4BnahdrA</recordid><startdate>20241210</startdate><enddate>20241210</enddate><creator>Shay, Naor R.</creator><creator>Socher, Eran</creator><creator>Degani, Ofir</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/socher@eng.tau.ac.il</orcidid><orcidid>https://orcid.org/naor.shay@intel.com</orcidid><orcidid>https://orcid.org/ofir.degani@intel.com</orcidid></search><sort><creationdate>20241210</creationdate><title>A Watt-Level, 3.3-V Triple-Stack Switched Capacitor Digital PA in FinFET Technology</title><author>Shay, Naor R. ; Socher, Eran ; Degani, Ofir</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c991-c0f5d2dfedd54be17a355159e292a1f55fc1daa0d4c1f0dd82ac92fbf82fde3a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Capacitors</topic><topic>Digital audio players</topic><topic>Digital power amplifier (DPA)</topic><topic>digital-to-time converter (DTC)</topic><topic>DTX</topic><topic>FinFETs</topic><topic>Logic gates</topic><topic>Multicore processing</topic><topic>Performance evaluation</topic><topic>polar TX</topic><topic>Stress</topic><topic>Topology</topic><topic>Transistors</topic><topic>Voltage</topic><topic>Wi-Fi-7</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shay, Naor R.</creatorcontrib><creatorcontrib>Socher, Eran</creatorcontrib><creatorcontrib>Degani, Ofir</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shay, Naor R.</au><au>Socher, Eran</au><au>Degani, Ofir</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Watt-Level, 3.3-V Triple-Stack Switched Capacitor Digital PA in FinFET Technology</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2024-12-10</date><risdate>2024</risdate><spage>1</spage><epage>11</epage><pages>1-11</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract><![CDATA[This work proposes and analyzes a new circuit topology that enables reliable triple-transistor stacking in the switched-capacitor digital power amplifier (SC-DPA) working from a 3.3-V supply, about three times the process maximum allowed voltage across the transistor nodes (<inline-formula> <tex-math notation="LaTeX">V_{D,\text{Max}}</tex-math> </inline-formula>). The proposed topology employs capacitive feedback (CF) to meet device voltage constraints. Higher supply voltage usage results in reduced supply ripples and improved memory effects while allowing higher power watt-level SC-DPA. A 5-7-GHz, dual-core Doherty-like combining SC-DPA prototype was implemented and integrated into an all-digital polar transmitter (DPTX) using 16-nm FinFET CMOS technology. The SC-DPA demonstrates a maximum power (<inline-formula> <tex-math notation="LaTeX">P_{\text{max}}</tex-math> </inline-formula>)/power efficiency (PE) of 30.15 dBm/34.7% at 5.2 GHz. An error vector magnitude (EVM)/power consumption of <inline-formula> <tex-math notation="LaTeX">-</tex-math> </inline-formula>38 dB/830 mW is measured at 6.1-GHz and 9-dB BO (dBBO) from <inline-formula> <tex-math notation="LaTeX">P_{\text{max}}</tex-math> </inline-formula>, thus meeting MCS13 4096-QAM OFDM Wi-Fi7 requirement. The high-temperature operating life (HTOL) accelerating aging test was performed showing the ability to meet the expected lifetime of the device with only 0.5-dB <inline-formula> <tex-math notation="LaTeX">P_{\text{max}}</tex-math> </inline-formula> degradation.]]></abstract><pub>IEEE</pub><doi>10.1109/TMTT.2024.3509493</doi><tpages>11</tpages><orcidid>https://orcid.org/socher@eng.tau.ac.il</orcidid><orcidid>https://orcid.org/naor.shay@intel.com</orcidid><orcidid>https://orcid.org/ofir.degani@intel.com</orcidid></addata></record> |
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subjects | Capacitors Digital audio players Digital power amplifier (DPA) digital-to-time converter (DTC) DTX FinFETs Logic gates Multicore processing Performance evaluation polar TX Stress Topology Transistors Voltage Wi-Fi-7 |
title | A Watt-Level, 3.3-V Triple-Stack Switched Capacitor Digital PA in FinFET Technology |
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