A Watt-Level, 3.3-V Triple-Stack Switched Capacitor Digital PA in FinFET Technology
This work proposes and analyzes a new circuit topology that enables reliable triple-transistor stacking in the switched-capacitor digital power amplifier (SC-DPA) working from a 3.3-V supply, about three times the process maximum allowed voltage across the transistor nodes ( V_{D,\text{Max}} ). The...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2024-12, p.1-11 |
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Sprache: | eng |
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Zusammenfassung: | This work proposes and analyzes a new circuit topology that enables reliable triple-transistor stacking in the switched-capacitor digital power amplifier (SC-DPA) working from a 3.3-V supply, about three times the process maximum allowed voltage across the transistor nodes ( V_{D,\text{Max}} ). The proposed topology employs capacitive feedback (CF) to meet device voltage constraints. Higher supply voltage usage results in reduced supply ripples and improved memory effects while allowing higher power watt-level SC-DPA. A 5-7-GHz, dual-core Doherty-like combining SC-DPA prototype was implemented and integrated into an all-digital polar transmitter (DPTX) using 16-nm FinFET CMOS technology. The SC-DPA demonstrates a maximum power ( P_{\text{max}} )/power efficiency (PE) of 30.15 dBm/34.7% at 5.2 GHz. An error vector magnitude (EVM)/power consumption of - 38 dB/830 mW is measured at 6.1-GHz and 9-dB BO (dBBO) from P_{\text{max}} , thus meeting MCS13 4096-QAM OFDM Wi-Fi7 requirement. The high-temperature operating life (HTOL) accelerating aging test was performed showing the ability to meet the expected lifetime of the device with only 0.5-dB P_{\text{max}} degradation. |
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ISSN: | 0018-9480 |
DOI: | 10.1109/TMTT.2024.3509493 |