Wafer-Scale Fabricated MEMS-type Ionization Vacuum Sensors Based on Through Glass Via Technology
The paper presents a MEMS-type ionization vacuum sensor fabricated in batch on 4-in wafers based on through glass via (TGV) technology. The utilization of TGV technology enables the sensor to exhibit a compact three-layer stacked structure, where an yttrium oxide thermionic electron emitter and an i...
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| Veröffentlicht in: | IEEE electron device letters 2024-11, p.1-1 |
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| container_title | IEEE electron device letters |
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| creator | Zhao, Yanqing Yu, Yuqiang He, Yidan Li, Yang Guo, Dengzhu Li, Zhiwei Wei, Xianlong |
| description | The paper presents a MEMS-type ionization vacuum sensor fabricated in batch on 4-in wafers based on through glass via (TGV) technology. The utilization of TGV technology enables the sensor to exhibit a compact three-layer stacked structure, where an yttrium oxide thermionic electron emitter and an ion collector are assembled in the same TGV layer. In addition to the compact dimensions of only 14×9×3.6 mm 3 , the wafer-scale fabricated sensors exhibit a wide measurement range from 1×10 -4 Pa to 40 Pa, an improved sensitivity of 0.019 Pa -1 and a production yield of 94%. All these results imply the promising applications of our sensors for vacuum measurement, especially for in-situ vacuum monitoring in vacuum electronic devices. |
| doi_str_mv | 10.1109/LED.2024.3507757 |
| format | Article |
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All these results imply the promising applications of our sensors for vacuum measurement, especially for in-situ vacuum monitoring in vacuum electronic devices.</description><subject>Current measurement</subject><subject>Electrons</subject><subject>Fabrication</subject><subject>Glass</subject><subject>Ionization vacuum sensor</subject><subject>microelectromechanical system (MEMS)</subject><subject>Performance evaluation</subject><subject>Semiconductor device measurement</subject><subject>Sensitivity</subject><subject>Sensors</subject><subject>Silicon</subject><subject>thermionic emission</subject><subject>through glass via</subject><subject>Vacuum technology</subject><subject>yttrium oxide</subject><issn>0741-3106</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFirFuwjAUAD2ABC3sHRjeDyQ8Jw5W1rahVCpTojDCI30krkKM7GRIv74M3ZlOujshXiSGUmK6_srewwgjFcYJap3oiZijVjKIJW5m4sn7H0SplFZzcTrQhV2QV9QybOnsTEU9f8M-2-dBP94YPm1nfqk3toOSqmG4Qs6dt87DK_n7efdF4-xQN_DRkvdQGoKCq6azra3HhZheqPW8_OezWG2z4m0XGGY-3py5khuPEvUmVYmMH-Q_UOtC4g</recordid><startdate>20241126</startdate><enddate>20241126</enddate><creator>Zhao, Yanqing</creator><creator>Yu, Yuqiang</creator><creator>He, Yidan</creator><creator>Li, Yang</creator><creator>Guo, Dengzhu</creator><creator>Li, Zhiwei</creator><creator>Wei, Xianlong</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><orcidid>https://orcid.org/0000-0002-1181-9500</orcidid><orcidid>https://orcid.org/0000-0002-5931-9310</orcidid><orcidid>https://orcid.org/0009-0003-4939-2519</orcidid><orcidid>https://orcid.org/0000-0001-7203-8313</orcidid></search><sort><creationdate>20241126</creationdate><title>Wafer-Scale Fabricated MEMS-type Ionization Vacuum Sensors Based on Through Glass Via Technology</title><author>Zhao, Yanqing ; Yu, Yuqiang ; He, Yidan ; Li, Yang ; Guo, Dengzhu ; Li, Zhiwei ; Wei, Xianlong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_107694513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Current measurement</topic><topic>Electrons</topic><topic>Fabrication</topic><topic>Glass</topic><topic>Ionization vacuum sensor</topic><topic>microelectromechanical system (MEMS)</topic><topic>Performance evaluation</topic><topic>Semiconductor device measurement</topic><topic>Sensitivity</topic><topic>Sensors</topic><topic>Silicon</topic><topic>thermionic emission</topic><topic>through glass via</topic><topic>Vacuum technology</topic><topic>yttrium oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Yanqing</creatorcontrib><creatorcontrib>Yu, Yuqiang</creatorcontrib><creatorcontrib>He, Yidan</creatorcontrib><creatorcontrib>Li, Yang</creatorcontrib><creatorcontrib>Guo, Dengzhu</creatorcontrib><creatorcontrib>Li, Zhiwei</creatorcontrib><creatorcontrib>Wei, Xianlong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhao, Yanqing</au><au>Yu, Yuqiang</au><au>He, Yidan</au><au>Li, Yang</au><au>Guo, Dengzhu</au><au>Li, Zhiwei</au><au>Wei, Xianlong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Wafer-Scale Fabricated MEMS-type Ionization Vacuum Sensors Based on Through Glass Via Technology</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2024-11-26</date><risdate>2024</risdate><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0741-3106</issn><coden>EDLEDZ</coden><abstract>The paper presents a MEMS-type ionization vacuum sensor fabricated in batch on 4-in wafers based on through glass via (TGV) technology. 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| subjects | Current measurement Electrons Fabrication Glass Ionization vacuum sensor microelectromechanical system (MEMS) Performance evaluation Semiconductor device measurement Sensitivity Sensors Silicon thermionic emission through glass via Vacuum technology yttrium oxide |
| title | Wafer-Scale Fabricated MEMS-type Ionization Vacuum Sensors Based on Through Glass Via Technology |
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