Wafer-Scale Fabricated MEMS-type Ionization Vacuum Sensors Based on Through Glass Via Technology
The paper presents a MEMS-type ionization vacuum sensor fabricated in batch on 4-in wafers based on through glass via (TGV) technology. The utilization of TGV technology enables the sensor to exhibit a compact three-layer stacked structure, where an yttrium oxide thermionic electron emitter and an i...
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Veröffentlicht in: | IEEE electron device letters 2024-11, p.1-1 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The paper presents a MEMS-type ionization vacuum sensor fabricated in batch on 4-in wafers based on through glass via (TGV) technology. The utilization of TGV technology enables the sensor to exhibit a compact three-layer stacked structure, where an yttrium oxide thermionic electron emitter and an ion collector are assembled in the same TGV layer. In addition to the compact dimensions of only 14×9×3.6 mm 3 , the wafer-scale fabricated sensors exhibit a wide measurement range from 1×10 -4 Pa to 40 Pa, an improved sensitivity of 0.019 Pa -1 and a production yield of 94%. All these results imply the promising applications of our sensors for vacuum measurement, especially for in-situ vacuum monitoring in vacuum electronic devices. |
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ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2024.3507757 |