Stimulated emission in multiply doped Ho3+:YLF and YAG - A comparison

A comparison of threshold and slope efficiency is made for 2-μm laser action in Ho 3+ -doped YLF and YAG hosts at room temperature. Spectroscopic and laser properties of these materials are also discussed.

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Veröffentlicht in:IEEE journal of quantum electronics 1972-01, Vol.8 (2), p.225-230
Hauptverfasser: Chicklis, E., Naiman, C., Folweiler, R., Doherty, J.
Format: Artikel
Sprache:eng
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Zusammenfassung:A comparison of threshold and slope efficiency is made for 2-μm laser action in Ho 3+ -doped YLF and YAG hosts at room temperature. Spectroscopic and laser properties of these materials are also discussed.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1972.1076917