Fast β-Ga2O3 Solar-Blind Photodetectors with High Detectivity on Sapphire Substrates
Ga 2 O 3 Solar blind photodetectors (PDs) have been widely researched in recent years due to their ultrawide bandgap. In this work, high-quality β-Ga 2 O 3 film with Full Width at Half Maximum (FWHM) of 0.19° was grown on sapphire substrates by MOCVD. The Ga 2 O 3 Metal Semiconductor-Metal PDs were...
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| creator | He, Chen Zheng, Jun Wu, Yiyang Cui, Jinlai Liu, Xianquan Liu, Zhi Zuo, Yuhua Cheng, Buwen |
| description | Ga 2 O 3 Solar blind photodetectors (PDs) have been widely researched in recent years due to their ultrawide bandgap. In this work, high-quality β-Ga 2 O 3 film with Full Width at Half Maximum (FWHM) of 0.19° was grown on sapphire substrates by MOCVD. The Ga 2 O 3 Metal Semiconductor-Metal PDs were fabricated, showing a high response wavelength selectivity of 1.89×10 5 (R 250 nm/R 400 nm ). At 10 V, the PDs show responsivity (R) of nearly 500 A/W at 254 nm, specific detectivity (D*) of 1.7 × 10 14 Jones, and response time of merely 1.5 ms, indicating its great potential for solar blind detection. Finally, images were obtained under illuminated light of only 178 nW/cm 2 at 254 nm wavelength. These results open avenues for advanced Ga 2 O 3 -based optoelectronics. |
| doi_str_mv | 10.1109/LED.2024.3497005 |
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| fullrecord | <record><control><sourceid>ieee_RIE</sourceid><recordid>TN_cdi_ieee_primary_10752623</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10752623</ieee_id><sourcerecordid>10752623</sourcerecordid><originalsourceid>FETCH-ieee_primary_107526233</originalsourceid><addsrcrecordid>eNqFybsKwjAUgOEMCtbL7uBwXiD15GKLq_dBUKjOJWq0kWpKEhVfywfxmQRxd_rh-wnpMowZw2F_OZ3EHLmMhRymiIMaiTCVjAqGSYM0vT8jMilTGZHtTPkA7xedK74SkNlSOToqzfUA68IGe9BB74N1Hh4mFLAwpwImXzN3E55gr5CpqiqM05Dddj44FbRvk_pRlV53fm2R3my6GS-o0VrnlTMX5Z45w3TAEy7En_0Bnvk_tg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Fast β-Ga2O3 Solar-Blind Photodetectors with High Detectivity on Sapphire Substrates</title><source>IEEE Electronic Library (IEL)</source><creator>He, Chen ; Zheng, Jun ; Wu, Yiyang ; Cui, Jinlai ; Liu, Xianquan ; Liu, Zhi ; Zuo, Yuhua ; Cheng, Buwen</creator><creatorcontrib>He, Chen ; Zheng, Jun ; Wu, Yiyang ; Cui, Jinlai ; Liu, Xianquan ; Liu, Zhi ; Zuo, Yuhua ; Cheng, Buwen</creatorcontrib><description>Ga 2 O 3 Solar blind photodetectors (PDs) have been widely researched in recent years due to their ultrawide bandgap. In this work, high-quality β-Ga 2 O 3 film with Full Width at Half Maximum (FWHM) of 0.19° was grown on sapphire substrates by MOCVD. The Ga 2 O 3 Metal Semiconductor-Metal PDs were fabricated, showing a high response wavelength selectivity of 1.89×10 5 (R 250 nm/R 400 nm ). At 10 V, the PDs show responsivity (R) of nearly 500 A/W at 254 nm, specific detectivity (D*) of 1.7 × 10 14 Jones, and response time of merely 1.5 ms, indicating its great potential for solar blind detection. Finally, images were obtained under illuminated light of only 178 nW/cm 2 at 254 nm wavelength. These results open avenues for advanced Ga 2 O 3 -based optoelectronics.</description><identifier>ISSN: 0741-3106</identifier><identifier>DOI: 10.1109/LED.2024.3497005</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Density measurement ; detectivity ; Detectors ; Lighting ; MOCVD ; Optical imaging ; Photodetectors ; Power system measurements ; Sensitivity ; solar-blind photodetector ; Substrates ; X-ray diffraction ; β-Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3</subject><ispartof>IEEE electron device letters, 2024-11, p.1-1</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-8622-2661 ; 0000-0003-2551-0640 ; 0000-0002-6547-1458 ; 0000-0001-5346-7569</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10752623$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10752623$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>He, Chen</creatorcontrib><creatorcontrib>Zheng, Jun</creatorcontrib><creatorcontrib>Wu, Yiyang</creatorcontrib><creatorcontrib>Cui, Jinlai</creatorcontrib><creatorcontrib>Liu, Xianquan</creatorcontrib><creatorcontrib>Liu, Zhi</creatorcontrib><creatorcontrib>Zuo, Yuhua</creatorcontrib><creatorcontrib>Cheng, Buwen</creatorcontrib><title>Fast β-Ga2O3 Solar-Blind Photodetectors with High Detectivity on Sapphire Substrates</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Ga 2 O 3 Solar blind photodetectors (PDs) have been widely researched in recent years due to their ultrawide bandgap. In this work, high-quality β-Ga 2 O 3 film with Full Width at Half Maximum (FWHM) of 0.19° was grown on sapphire substrates by MOCVD. The Ga 2 O 3 Metal Semiconductor-Metal PDs were fabricated, showing a high response wavelength selectivity of 1.89×10 5 (R 250 nm/R 400 nm ). At 10 V, the PDs show responsivity (R) of nearly 500 A/W at 254 nm, specific detectivity (D*) of 1.7 × 10 14 Jones, and response time of merely 1.5 ms, indicating its great potential for solar blind detection. Finally, images were obtained under illuminated light of only 178 nW/cm 2 at 254 nm wavelength. These results open avenues for advanced Ga 2 O 3 -based optoelectronics.</description><subject>Density measurement</subject><subject>detectivity</subject><subject>Detectors</subject><subject>Lighting</subject><subject>MOCVD</subject><subject>Optical imaging</subject><subject>Photodetectors</subject><subject>Power system measurements</subject><subject>Sensitivity</subject><subject>solar-blind photodetector</subject><subject>Substrates</subject><subject>X-ray diffraction</subject><subject>β-Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3</subject><issn>0741-3106</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFybsKwjAUgOEMCtbL7uBwXiD15GKLq_dBUKjOJWq0kWpKEhVfywfxmQRxd_rh-wnpMowZw2F_OZ3EHLmMhRymiIMaiTCVjAqGSYM0vT8jMilTGZHtTPkA7xedK74SkNlSOToqzfUA68IGe9BB74N1Hh4mFLAwpwImXzN3E55gr5CpqiqM05Dddj44FbRvk_pRlV53fm2R3my6GS-o0VrnlTMX5Z45w3TAEy7En_0Bnvk_tg</recordid><startdate>20241112</startdate><enddate>20241112</enddate><creator>He, Chen</creator><creator>Zheng, Jun</creator><creator>Wu, Yiyang</creator><creator>Cui, Jinlai</creator><creator>Liu, Xianquan</creator><creator>Liu, Zhi</creator><creator>Zuo, Yuhua</creator><creator>Cheng, Buwen</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><orcidid>https://orcid.org/0000-0002-8622-2661</orcidid><orcidid>https://orcid.org/0000-0003-2551-0640</orcidid><orcidid>https://orcid.org/0000-0002-6547-1458</orcidid><orcidid>https://orcid.org/0000-0001-5346-7569</orcidid></search><sort><creationdate>20241112</creationdate><title>Fast β-Ga2O3 Solar-Blind Photodetectors with High Detectivity on Sapphire Substrates</title><author>He, Chen ; Zheng, Jun ; Wu, Yiyang ; Cui, Jinlai ; Liu, Xianquan ; Liu, Zhi ; Zuo, Yuhua ; Cheng, Buwen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_107526233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Density measurement</topic><topic>detectivity</topic><topic>Detectors</topic><topic>Lighting</topic><topic>MOCVD</topic><topic>Optical imaging</topic><topic>Photodetectors</topic><topic>Power system measurements</topic><topic>Sensitivity</topic><topic>solar-blind photodetector</topic><topic>Substrates</topic><topic>X-ray diffraction</topic><topic>β-Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>He, Chen</creatorcontrib><creatorcontrib>Zheng, Jun</creatorcontrib><creatorcontrib>Wu, Yiyang</creatorcontrib><creatorcontrib>Cui, Jinlai</creatorcontrib><creatorcontrib>Liu, Xianquan</creatorcontrib><creatorcontrib>Liu, Zhi</creatorcontrib><creatorcontrib>Zuo, Yuhua</creatorcontrib><creatorcontrib>Cheng, Buwen</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>He, Chen</au><au>Zheng, Jun</au><au>Wu, Yiyang</au><au>Cui, Jinlai</au><au>Liu, Xianquan</au><au>Liu, Zhi</au><au>Zuo, Yuhua</au><au>Cheng, Buwen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fast β-Ga2O3 Solar-Blind Photodetectors with High Detectivity on Sapphire Substrates</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2024-11-12</date><risdate>2024</risdate><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0741-3106</issn><coden>EDLEDZ</coden><abstract>Ga 2 O 3 Solar blind photodetectors (PDs) have been widely researched in recent years due to their ultrawide bandgap. In this work, high-quality β-Ga 2 O 3 film with Full Width at Half Maximum (FWHM) of 0.19° was grown on sapphire substrates by MOCVD. The Ga 2 O 3 Metal Semiconductor-Metal PDs were fabricated, showing a high response wavelength selectivity of 1.89×10 5 (R 250 nm/R 400 nm ). At 10 V, the PDs show responsivity (R) of nearly 500 A/W at 254 nm, specific detectivity (D*) of 1.7 × 10 14 Jones, and response time of merely 1.5 ms, indicating its great potential for solar blind detection. Finally, images were obtained under illuminated light of only 178 nW/cm 2 at 254 nm wavelength. These results open avenues for advanced Ga 2 O 3 -based optoelectronics.</abstract><pub>IEEE</pub><doi>10.1109/LED.2024.3497005</doi><orcidid>https://orcid.org/0000-0002-8622-2661</orcidid><orcidid>https://orcid.org/0000-0003-2551-0640</orcidid><orcidid>https://orcid.org/0000-0002-6547-1458</orcidid><orcidid>https://orcid.org/0000-0001-5346-7569</orcidid></addata></record> |
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| subjects | Density measurement detectivity Detectors Lighting MOCVD Optical imaging Photodetectors Power system measurements Sensitivity solar-blind photodetector Substrates X-ray diffraction β-Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3 |
| title | Fast β-Ga2O3 Solar-Blind Photodetectors with High Detectivity on Sapphire Substrates |
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