Fast β-Ga2O3 Solar-Blind Photodetectors with High Detectivity on Sapphire Substrates

Ga 2 O 3 Solar blind photodetectors (PDs) have been widely researched in recent years due to their ultrawide bandgap. In this work, high-quality β-Ga 2 O 3 film with Full Width at Half Maximum (FWHM) of 0.19° was grown on sapphire substrates by MOCVD. The Ga 2 O 3 Metal Semiconductor-Metal PDs were fabricated, showing a high response wavelength selectivity of 1.89×10 5 (R 250 nm/R 400 nm ). At 10 V, the PDs show responsivity (R) of nearly 500 A/W at 254 nm, specific detectivity (D*) of 1.7 × 10 14 Jones, and response time of merely 1.5 ms, indicating its great potential for solar blind detection. Finally, images were obtained under illuminated light of only 178 nW/cm 2 at 254 nm wavelength. These results open avenues for advanced Ga 2 O 3 -based optoelectronics.