Noise analysis of injection-locked semiconductor injection lasers

The noise of injection-locked semiconductor lasers is analyzed by rate equations including the spontaneous emission noise. The side mode suppression and the relative intensity noise (RIN) of the locked laser (slave laser) are given for different wavelengths detuning between the master and slave lase...

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Veröffentlicht in:IEEE J. Quant. Electron.; (United States) 1986-05, Vol.22 (5), p.642-650
Hauptverfasser: Schunk, N., Petermann, K.
Format: Artikel
Sprache:eng
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Zusammenfassung:The noise of injection-locked semiconductor lasers is analyzed by rate equations including the spontaneous emission noise. The side mode suppression and the relative intensity noise (RIN) of the locked laser (slave laser) are given for different wavelengths detuning between the master and slave laser and for different linewidth enhancement factors α. For large α, locking is difficult to achieve, whereas extremely low noise may be obtained for injection-locked lasers with a low linewidth enhancement factor.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1986.1073018