Continuous room-temperature photopumped laser operation of visible-spectrum LPE In1-xGaxP1-zAsz(λ ~ 6700 Å)

Continuous room-temperature photopumped laser operation of visible-spectrum LPE In1-xGaxP1-zAsz(λ ~ 6700 Å)

A modified version of the standard step cooled LPE growth process is described for the growth of visible-spectrum In 1-x Ga x P 1-z As z double-heterostructure (DH) lasers on GaAs 1-y P y ( y \sim 0.30 ). The quality of the quaternary epitaxial layers is improved by growing a "thick" unifo...

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Veröffentlicht in:IEEE journal of quantum electronics 1981-01, Vol.17 (2), p.161-166
Hauptverfasser: Kirchoefer, S., Rezek, E., Vojak, B., Holonyak, N., Finn, D., Keune, D., Rossi, J.
Format: Artikel
Sprache:eng
Schlagworte:
DH-HEMTs
Epitaxial growth
Epitaxial layers
Laboratories
Laser transitions
Light sources
Optical materials
Optical pulses
Semiconductor lasers
Semiconductor materials
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Zusammenfassung:A modified version of the standard step cooled LPE growth process is described for the growth of visible-spectrum In 1-x Ga x P 1-z As z double-heterostructure (DH) lasers on GaAs 1-y P y ( y \sim 0.30 ). The quality of the quaternary epitaxial layers is improved by growing a "thick" uniform active region (∼1000 Å) by means of a multiple-layer stack of "thin" (∼100 Å) layers. Each of the "thin" layers grown (cyclically) from an equilibrium melt in the short growth period of
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1981.1071064