Electrical Properties of Dual-Gate, Ultrashort Monolayer WS₂ Transistors

We report on the observation of record high current density in ultrashort dual-gate (DG) monolayer chemical vapor deposition WS2 field-effect transistors (FETs). The DG FETs were defined by means of a seed layer for depositing the top-gate high- \kappa dielectric. By using semi-metallic Sb as contacts, we achieved a low contact resistance of 550 \; \Omega \cdot \mu m. A statistical study was conducted for 150 FETs with scaling channel length from 1 \; \mu m down to 15 nm. A record high on-state current of 630 \; \mu A/ \mu m was demonstrated at room temperature ( 680 \; \mu A/ \mu m at 8 K) with a 1 V bias. This work unveils the tremendous potential of monolayer WS2 for ultimate downscaling solutions in future nanoelectronics.