Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p-and n-MOSFETs

The mobility scattering mechanisms in the ultra-thin-body (UTB) Ge-OI p-and n-MOSFETs have been systematically investigated. It is found that the \textit{E} _{\text{eff}}^{-\text{2}} dependence is confirmed for the hole \vphantom{^{\int}} mobility in Ge-OI pMOSFETs, while the electron mobility exhibits an unusually strong dependence on \textit{E} _{\text{eff}} ( \propto \textit{E} _{\text{eff}}^{-\text{4}}\text{)} . The \mu _{\text{ph}} exhibits an \textit{E} _{\text{eff}}^{\,{-\text{0}.\text{3}}} dependence for both holes and electrons, along with a temperature dependence of \sim \textit{T} ^{\,{-\text{1}.\text{8}}} . The \mu_{\text{total}} is measured at different depletion layer carrier densities ( \textit{N} _{\text{depl}}\text{)} , revealing that \mu _{\text{Coulomb}} increases with the rise of \textit{N} _{\text{depl}} . Specially, \mu _{\text{Coulomb}} exhibits \textit{N}