A Second-Order Noise Shaping SAR ADC With Parallel Multiresidual Integrator

This brief proposes a parallel multiresidual (PMR) integrator to enhance the noise-shaping (NS) effect for successive approximation register (SAR) analog-to-digital converter (ADC). The PMR employs passive integrators in parallel to simultaneously integrate the average result of the multiple sequent...

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Veröffentlicht in:IEEE transactions on very large scale integration (VLSI) systems 2024-11, Vol.32 (11), p.2135-2138
Hauptverfasser: Zhou, Yang, Wang, Wenjie, Zhu, Longbin, Zhu, Zhengtao, Su, Risheng, Zheng, Jianan, Xie, Siyuan, Li, Jihong, Meng, Fanyi, Zhou, Zhijun, Wang, Keping
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Sprache:eng
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Zusammenfassung:This brief proposes a parallel multiresidual (PMR) integrator to enhance the noise-shaping (NS) effect for successive approximation register (SAR) analog-to-digital converter (ADC). The PMR employs passive integrators in parallel to simultaneously integrate the average result of the multiple sequential residual voltages. The proposed PMR technique provides an alternative scheme to enhance the NS rather than increasing the order of the integrator to suppress the instability and power. A prototype 7-bit second-order NS-SAR ADC is designed and simulated in a 130-nm CMOS process. PMR increases the effective number of bits (ENOBs) to 10.6 bit, which enhances the NS effect of 3.6 bit. It achieves a peak signal-to-noise and distortion ratio (SNDR) of 65.84 dB over a bandwidth of 1.3 kHz at the oversampling ratio (OSR) of 16.
ISSN:1063-8210
1557-9999
DOI:10.1109/TVLSI.2024.3447740