Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMT's under optical illumination

Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMT's under optical illumination

Theoretical and experimental work for the DC and RF performance of depletion mode Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMTs under optical illumination is presented. The photoconductive effect increasing the 2-DEG channel electron concentration and photovoltaic effect in the gate junction are considered. O...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1991-12, Vol.39 (12), p.2010-2017
Hauptverfasser: de Salles, A.A., Romero, M.A.
Format: Artikel
Sprache:eng
Schlagworte:
Electron optics
Gallium arsenide
HEMTs
Lighting
MODFETs
Optical tuning
Photoconductivity
Photovoltaic effects
Radio frequency
Stimulated emission
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Zusammenfassung:Theoretical and experimental work for the DC and RF performance of depletion mode Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMTs under optical illumination is presented. The photoconductive effect increasing the 2-DEG channel electron concentration and photovoltaic effect in the gate junction are considered. Optical tuning of a 2 GHz HEMT oscillator and optical control of the gain of a 2 to 6 GHz HEMT amplifier are presented and potential applications are described.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.106540