Magnetic after effect and walls in FeTi2S4

FeTi 2 S 4 presents a magnetic after-effect (change of magnetization with time with a constant applied field). The ionic or electronic diffusion aftereffect is well known. But domain walls in those very anisotropic materials are very narrow and give rise to a particular mechanism of magnetic after e...

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Veröffentlicht in:IEEE transactions on magnetics 1981-01, Vol.17 (6), p.3102-3104
Hauptverfasser: Marais, A., Villers, G., Vautier, R.
Format: Artikel
Sprache:eng
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Zusammenfassung:FeTi 2 S 4 presents a magnetic after-effect (change of magnetization with time with a constant applied field). The ionic or electronic diffusion aftereffect is well known. But domain walls in those very anisotropic materials are very narrow and give rise to a particular mechanism of magnetic after effect. A priori, the two process are possible in FeTi 2 S 4 . The experimental procedure to study the magnetic after-effect in FeTi 2 S 4 is described and the results show there are several phenomena with different activation energies. The possibility of existence of narrow walls is also discussed.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.1981.1061647