Magnetic after effect and walls in FeTi2S4
FeTi 2 S 4 presents a magnetic after-effect (change of magnetization with time with a constant applied field). The ionic or electronic diffusion aftereffect is well known. But domain walls in those very anisotropic materials are very narrow and give rise to a particular mechanism of magnetic after e...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on magnetics 1981-01, Vol.17 (6), p.3102-3104 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | FeTi 2 S 4 presents a magnetic after-effect (change of magnetization with time with a constant applied field). The ionic or electronic diffusion aftereffect is well known. But domain walls in those very anisotropic materials are very narrow and give rise to a particular mechanism of magnetic after effect. A priori, the two process are possible in FeTi 2 S 4 . The experimental procedure to study the magnetic after-effect in FeTi 2 S 4 is described and the results show there are several phenomena with different activation energies. The possibility of existence of narrow walls is also discussed. |
---|---|
ISSN: | 0018-9464 1941-0069 |
DOI: | 10.1109/TMAG.1981.1061647 |