Dual-Light Trapping From SiC Nano Dual-Structures Enables High-Responsivity van der Waals MSM Photodetector for UV Light Monitoring
Herein, a SiC nanocone-nanohole dual-structured arrays (SiC NC-NHs) was proposed to improve ultraviolet (UV) photoresponse. Owing to the dual-light trapping effect, the novel as-fabricated Ti3C2Tx-SiC NC-NHs-Ti3C2Tx van der Waals (vdW) metal-semiconductor-metal (MSM) photodetector (PD) exhibits a re...
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Veröffentlicht in: | IEEE electron device letters 2024-09, Vol.45 (9), p.1614-1617 |
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Sprache: | eng |
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Zusammenfassung: | Herein, a SiC nanocone-nanohole dual-structured arrays (SiC NC-NHs) was proposed to improve ultraviolet (UV) photoresponse. Owing to the dual-light trapping effect, the novel as-fabricated Ti3C2Tx-SiC NC-NHs-Ti3C2Tx van der Waals (vdW) metal-semiconductor-metal (MSM) photodetector (PD) exhibits a responsivity up to 10.5 A/W @ 254 nm and an external quantum efficiency (EQE) of 5126% at bias voltage of -2 V, which are superior to most of previous UV PDs. Furthermore, a sensing system with functions of real-time and continuous UV radiation monitoring was successfully realized. The simple fabrication of the SiC-based vdW MSM PD can provide a pathway for integration of high-responsivity PDs for UV light monitoring. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2024.3424499 |