Dual-Light Trapping From SiC Nano Dual-Structures Enables High-Responsivity van der Waals MSM Photodetector for UV Light Monitoring

Herein, a SiC nanocone-nanohole dual-structured arrays (SiC NC-NHs) was proposed to improve ultraviolet (UV) photoresponse. Owing to the dual-light trapping effect, the novel as-fabricated Ti3C2Tx-SiC NC-NHs-Ti3C2Tx van der Waals (vdW) metal-semiconductor-metal (MSM) photodetector (PD) exhibits a re...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2024-09, Vol.45 (9), p.1614-1617
Hauptverfasser: Sun, Yangyang, Wang, Chen, Xie, Siyi, Lu, Yunbo, Li, Zhenmin, Chen, Shirong, Xu, Gaobin, Yu, Yongqiang
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Herein, a SiC nanocone-nanohole dual-structured arrays (SiC NC-NHs) was proposed to improve ultraviolet (UV) photoresponse. Owing to the dual-light trapping effect, the novel as-fabricated Ti3C2Tx-SiC NC-NHs-Ti3C2Tx van der Waals (vdW) metal-semiconductor-metal (MSM) photodetector (PD) exhibits a responsivity up to 10.5 A/W @ 254 nm and an external quantum efficiency (EQE) of 5126% at bias voltage of -2 V, which are superior to most of previous UV PDs. Furthermore, a sensing system with functions of real-time and continuous UV radiation monitoring was successfully realized. The simple fabrication of the SiC-based vdW MSM PD can provide a pathway for integration of high-responsivity PDs for UV light monitoring.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3424499