Unlocking Circuits for Quantum With Open Source Silicon: A first look at measured open source silicon results at 4 K
On recent years, researchers across diverse disciplines have become increasingly interested in low-temperature electronics, which encompasses electronic engineering, material research, sensing, and computing. Among the myriad applications, notable domains include liquid nitrogen-cooled high-performa...
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Veröffentlicht in: | IEEE solid state circuits magazine 2024, Vol.16 (2), p.39-48 |
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Sprache: | eng |
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Zusammenfassung: | On recent years, researchers across diverse disciplines have become increasingly interested in low-temperature electronics, which encompasses electronic engineering, material research, sensing, and computing. Among the myriad applications, notable domains include liquid nitrogen-cooled high-performance computing, quantum computing, and deep space exploration [1] . This dynamic landscape has witnessed the culmination of numerous research studies, as evidenced by the rich array of findings outlined in references [2] , [3] , [4] , [5] , and [6] . This field is particularly fascinating due to its multifaceted applications, requiring a comprehensive understanding of knowledge, data, and tools that operate across varying temperature ranges, as detailed in [7] , where the goal is to move the control logic closer to the cryogenic device being tested. This task highlights the significant obstacles that arise when dealing with cryogenic circuitry. As temperatures drop below a certain threshold, the behavior of transistors and passive devices undergoes a significant transformation. Designers must carefully measure and model these devices internally, adjusting circuit scaling based on basic models. This process demands significantly more man-hours compared with conventional circuit design methodologies. The task could be streamlined with the presence of a shared metrology device modeling database among institutions. Such a resource would alleviate the need for redundant efforts and foster efficiency in cryogenic circuit design. |
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ISSN: | 1943-0582 1943-0590 |
DOI: | 10.1109/MSSC.2024.3385734 |