A 25-Gb/s Single-Ended PAM-4 Transmitter With iPWM-Based FFE and RLM-Matched Voltage-Mode Driver for High-Speed Memory Interfaces

This paper presents a 25-Gb/s single-ended four-level pulse amplitude modulation (PAM-4) transmitter (TX) with an integrated pulse width modulation (iPWM)-based feed-forward equalizer (FFE) and a ratio of level mismatch (RLM)-matched voltage-mode driver for high-speed memory interfaces. The phase-do...

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Veröffentlicht in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2024-12, Vol.71 (12), p.6375-6384
Hauptverfasser: Choi, Yoonjae, Sim, Changmin, Choi, Jonghyuck, Sim, Jincheol, Park, Hyunsu, Kwon, Youngwook, Park, Seungwoo, Kim, Seongcheol, Kim, Chulwoo
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Sprache:eng
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Zusammenfassung:This paper presents a 25-Gb/s single-ended four-level pulse amplitude modulation (PAM-4) transmitter (TX) with an integrated pulse width modulation (iPWM)-based feed-forward equalizer (FFE) and a ratio of level mismatch (RLM)-matched voltage-mode driver for high-speed memory interfaces. The phase-domain iPWM-based PAM-4 FFE is proposed to minimize the input/output (I/O) capacitance by equalizing the PAM-4 data in advance of the pre-driver. The TX bandwidth is increased while achieving superior energy efficiency. Moreover, the RLM-matched voltage-mode PAM-4 driver with a ZQ calibration is proposed to compensate for the impedance variation from the four output levels and improve the output linearity. An RLM control pull-up transistor in the proposed driver obviates the need for a data encoder or passive resistors to improve the RLM and occupies a small area. The proposed single-ended PAM-4 TX was fabricated in a 28-nm CMOS technology and occupies 0.005 mm2. It achieves 0.43 pJ/b at 25 Gb/s and an RLM of 99.3%.
ISSN:1549-8328
1558-0806
DOI:10.1109/TCSI.2024.3406928