Efficient, High Power, Wide-Aperture Single Emitter Diode Lasers Emitting at 915 nm

We present single emitter laser diodes with high optical output power ( \boldsymbol {P} {_{\text {out}}} ), conversion efficiency ( \boldsymbol {\eta } {_{\text {E}}} ), and lateral beam quality in quasi-continuous-wave (QCW) and continuous-wave (CW) operations enabled by using very wide stripe width (ranging from 400 to 1500 \mu m) and laterally structured p-side contact to prevent higher order and unwanted ring modes. We show that the maximum QCW \boldsymbol {P} {_{\text {out}}} increases for wider stripe and \boldsymbol {P} {_{\text {out}}} of \boldsymbol {\sim }~290 W (limited by facet failure) is obtained at \boldsymbol {\eta } {_{\text {E}}} =60 % for 1500 \mu m stripes using 500 \mu s pulse width and 10Hz repetition-rate at a heatsink temperature of \boldsymbol {T} {_{\text {HS}}} =25 °C. In contrast, the maximum CW \boldsymbol {P} {_{\text {out}}} of 71W (limited by the available cooling of the test set-up) at \boldsymbol {\eta } {_{\text {E}}} =59 % is obtained for 1000 \mu m stripes, with lateral-beam-parameter-product (BPPLat.) < 75mm \boldsymbol {\cdot } mrad, which is suitable for coupling into 1mm core 0.15NA fiber.