A configurable ROM circuit for use in gate arrays
A double word-line memory ROM (DWM-ROM) for use in gate arrays is described. It allows for an automatic layout by reducing the input pin count in the word lines by using two-step addressing. The advantage of this method has been verified by implementing a 16-bit microprocessor using an 8 K-gate arra...
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Veröffentlicht in: | IEEE journal of solid-state circuits 1987-02, Vol.22 (1), p.117-118 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A double word-line memory ROM (DWM-ROM) for use in gate arrays is described. It allows for an automatic layout by reducing the input pin count in the word lines by using two-step addressing. The advantage of this method has been verified by implementing a 16-bit microprocessor using an 8 K-gate array, based on a gate-isolated cell configuration, employing 1.5-/spl mu/m double-metal CMOS technology. The 16-bit /spl times/ 64-word ROM in the processor saves 30% of the transistor area due to the DWM-ROM. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.1987.1052683 |