A configurable ROM circuit for use in gate arrays

A double word-line memory ROM (DWM-ROM) for use in gate arrays is described. It allows for an automatic layout by reducing the input pin count in the word lines by using two-step addressing. The advantage of this method has been verified by implementing a 16-bit microprocessor using an 8 K-gate arra...

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Veröffentlicht in:IEEE journal of solid-state circuits 1987-02, Vol.22 (1), p.117-118
Hauptverfasser: Ueda, M., Sakashita, K., Arakawa, T., Okazaki, K., Asai, S., Kuramitsu, Y.
Format: Artikel
Sprache:eng
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Zusammenfassung:A double word-line memory ROM (DWM-ROM) for use in gate arrays is described. It allows for an automatic layout by reducing the input pin count in the word lines by using two-step addressing. The advantage of this method has been verified by implementing a 16-bit microprocessor using an 8 K-gate array, based on a gate-isolated cell configuration, employing 1.5-/spl mu/m double-metal CMOS technology. The 16-bit /spl times/ 64-word ROM in the processor saves 30% of the transistor area due to the DWM-ROM.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1987.1052683