CAD model for threshold and subthreshold conduction in MOSFETs
The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1982-06, Vol.17 (3), p.454-458 |
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| container_end_page | 458 |
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| container_issue | 3 |
| container_start_page | 454 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 17 |
| creator | Antognetti, P. Caviglia, D.D. Profumo, E. |
| description | The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors have implemented it in MSINC and SPICE programs, and simulation results are compared to experimental data for a micropower amplifier. |
| doi_str_mv | 10.1109/JSSC.1982.1051759 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_1051759</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1051759</ieee_id><sourcerecordid>28174373</sourcerecordid><originalsourceid>FETCH-LOGICAL-c294t-ae82633ae61a92d89c92dc4fa52625f005af5479dfc23de2b47c00d4083cef33</originalsourceid><addsrcrecordid>eNpNkDtPwzAUhS0EEqXwAxBLJrYUXz8ae0GqQnmpqEM7sFmuH2pQGhc7Gfj3JEolWO7VPfecM3wI3QKeAWD58L7ZlDOQgswAcyi4PEMT4FzkUNDPczTBGEQuCcaX6Cqlr_5kTMAEPZaLp-wQrKszH2LW7qNL-1DbTDc2S93uTzChsZ1pq9BkVZN9rDfPy226Rhde18ndnPYUbXu5fM1X65e3crHKDZGszbUTZE6pdnPQklghTT8N85qTOeEeY649Z4W03hBqHdmxwmBsGRbUOE_pFN2PtccYvjuXWnWoknF1rRsXuqSIgILRYjDCaDQxpBSdV8dYHXT8UYDVAEoNoNQASp1A9Zm7MVM55_75x-8vNSZjyA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28174373</pqid></control><display><type>article</type><title>CAD model for threshold and subthreshold conduction in MOSFETs</title><source>IEEE Electronic Library (IEL)</source><creator>Antognetti, P. ; Caviglia, D.D. ; Profumo, E.</creator><creatorcontrib>Antognetti, P. ; Caviglia, D.D. ; Profumo, E.</creatorcontrib><description>The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors have implemented it in MSINC and SPICE programs, and simulation results are compared to experimental data for a micropower amplifier.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.1982.1051759</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Circuit simulation ; Electronic components ; MOS devices ; MOSFET circuits ; Numerical analysis ; Operational amplifiers ; SPICE ; Subthreshold current ; Threshold voltage</subject><ispartof>IEEE journal of solid-state circuits, 1982-06, Vol.17 (3), p.454-458</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c294t-ae82633ae61a92d89c92dc4fa52625f005af5479dfc23de2b47c00d4083cef33</citedby><cites>FETCH-LOGICAL-c294t-ae82633ae61a92d89c92dc4fa52625f005af5479dfc23de2b47c00d4083cef33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1051759$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1051759$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Antognetti, P.</creatorcontrib><creatorcontrib>Caviglia, D.D.</creatorcontrib><creatorcontrib>Profumo, E.</creatorcontrib><title>CAD model for threshold and subthreshold conduction in MOSFETs</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors have implemented it in MSINC and SPICE programs, and simulation results are compared to experimental data for a micropower amplifier.</description><subject>Analytical models</subject><subject>Circuit simulation</subject><subject>Electronic components</subject><subject>MOS devices</subject><subject>MOSFET circuits</subject><subject>Numerical analysis</subject><subject>Operational amplifiers</subject><subject>SPICE</subject><subject>Subthreshold current</subject><subject>Threshold voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><recordid>eNpNkDtPwzAUhS0EEqXwAxBLJrYUXz8ae0GqQnmpqEM7sFmuH2pQGhc7Gfj3JEolWO7VPfecM3wI3QKeAWD58L7ZlDOQgswAcyi4PEMT4FzkUNDPczTBGEQuCcaX6Cqlr_5kTMAEPZaLp-wQrKszH2LW7qNL-1DbTDc2S93uTzChsZ1pq9BkVZN9rDfPy226Rhde18ndnPYUbXu5fM1X65e3crHKDZGszbUTZE6pdnPQklghTT8N85qTOeEeY649Z4W03hBqHdmxwmBsGRbUOE_pFN2PtccYvjuXWnWoknF1rRsXuqSIgILRYjDCaDQxpBSdV8dYHXT8UYDVAEoNoNQASp1A9Zm7MVM55_75x-8vNSZjyA</recordid><startdate>19820601</startdate><enddate>19820601</enddate><creator>Antognetti, P.</creator><creator>Caviglia, D.D.</creator><creator>Profumo, E.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19820601</creationdate><title>CAD model for threshold and subthreshold conduction in MOSFETs</title><author>Antognetti, P. ; Caviglia, D.D. ; Profumo, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c294t-ae82633ae61a92d89c92dc4fa52625f005af5479dfc23de2b47c00d4083cef33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1982</creationdate><topic>Analytical models</topic><topic>Circuit simulation</topic><topic>Electronic components</topic><topic>MOS devices</topic><topic>MOSFET circuits</topic><topic>Numerical analysis</topic><topic>Operational amplifiers</topic><topic>SPICE</topic><topic>Subthreshold current</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Antognetti, P.</creatorcontrib><creatorcontrib>Caviglia, D.D.</creatorcontrib><creatorcontrib>Profumo, E.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Antognetti, P.</au><au>Caviglia, D.D.</au><au>Profumo, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>CAD model for threshold and subthreshold conduction in MOSFETs</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1982-06-01</date><risdate>1982</risdate><volume>17</volume><issue>3</issue><spage>454</spage><epage>458</epage><pages>454-458</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors have implemented it in MSINC and SPICE programs, and simulation results are compared to experimental data for a micropower amplifier.</abstract><pub>IEEE</pub><doi>10.1109/JSSC.1982.1051759</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 1982-06, Vol.17 (3), p.454-458 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_ieee_primary_1051759 |
| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Circuit simulation Electronic components MOS devices MOSFET circuits Numerical analysis Operational amplifiers SPICE Subthreshold current Threshold voltage |
| title | CAD model for threshold and subthreshold conduction in MOSFETs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T08%3A35%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=CAD%20model%20for%20threshold%20and%20subthreshold%20conduction%20in%20MOSFETs&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Antognetti,%20P.&rft.date=1982-06-01&rft.volume=17&rft.issue=3&rft.spage=454&rft.epage=458&rft.pages=454-458&rft.issn=0018-9200&rft.eissn=1558-173X&rft.coden=IJSCBC&rft_id=info:doi/10.1109/JSSC.1982.1051759&rft_dat=%3Cproquest_RIE%3E28174373%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28174373&rft_id=info:pmid/&rft_ieee_id=1051759&rfr_iscdi=true |