CAD model for threshold and subthreshold conduction in MOSFETs

CAD model for threshold and subthreshold conduction in MOSFETs

The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors...

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Veröffentlicht in:IEEE journal of solid-state circuits 1982-06, Vol.17 (3), p.454-458
Hauptverfasser: Antognetti, P., Caviglia, D.D., Profumo, E.
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Circuit simulation
Electronic components
MOS devices
MOSFET circuits
Numerical analysis
Operational amplifiers
SPICE
Subthreshold current
Threshold voltage
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Beschreibung
Zusammenfassung:The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors have implemented it in MSINC and SPICE programs, and simulation results are compared to experimental data for a micropower amplifier.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1982.1051759