A static 4096-bit bipolar random-access memory

A static 4096-bit bipolar random-access memory

A description of a 23600 mil/SUP 2/, 35-ns 4096/spl times/1 bit bipolar RAM is presented. The historical evolution of density and performance of the 1024/spl times/1 forerunner along with advanced production and circuit techniques indicate the availability of an 11000 mil/SUP 2/, 10-ns, 4096/spl tim...

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Veröffentlicht in:IEEE journal of solid-state circuits 1977-10, Vol.12 (5), p.524-527
Hauptverfasser: Herndon, W.H., Ho, W., Ramirez, R.
Format: Artikel
Sprache:eng
Schlagworte:
Availability
Manufacturing
Memory management
MOSFET circuits
Production
Random access memory
Read-write memory
Research and development
Research and development management
Technology management
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Zusammenfassung:A description of a 23600 mil/SUP 2/, 35-ns 4096/spl times/1 bit bipolar RAM is presented. The historical evolution of density and performance of the 1024/spl times/1 forerunner along with advanced production and circuit techniques indicate the availability of an 11000 mil/SUP 2/, 10-ns, 4096/spl times/1 bipolar RAM by 1981.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1977.1050946