Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.

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Bibliographische Detailangaben
Hauptverfasser:	Shealy, J., Smart, J., Poulton, M., Sadler, R., Grider, D., Gibb, S., Hosse, B., Sousa, B., Halchin, D., Steel, V., Garber, P., Wilkerson, P., Zaroff, B., Dick, J., Mercier, T., Bonaker, J., Hamilton, M., Greer, C., Isenhour, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Amplifiers Applied sciences Circuit properties Conductivity Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Fabrication Gallium nitride HEMTs III-V semiconductor materials Low-noise amplifiers Oscillators, resonators, synthetizers Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Substrates Switching, multiplexing, switched capacity circuits Transistors
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Beschreibung
Zusammenfassung:	This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.
ISSN:	1064-7775 2379-5638
DOI:	10.1109/GAAS.2002.1049069