FinFET to GAA MBCFET: A Review and Insights

This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the dev...

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Veröffentlicht in:IEEE access 2024-01, Vol.12, p.1-1
Hauptverfasser: Das, Rinku Rani, Rajalekshmi, TR, James, Alex
Format: Artikel
Sprache:eng
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Zusammenfassung:This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2024.3384428