Experimental threshold logic implementations based on resonant tunnelling diodes

The design and fabrication of linear threshold gates is presented based on a monostable-bistable transition logic element. Each of its input terminals consist of a resonant tunnelling diode merged with a transistor device experimentally realized in the InP materials system. Both, the heterostructure field effect transistor and the heterobipolar transistor approach are discussed in terms of level-compatibility, the facility of positive and negative weights, and robustness. The design and technology of a 1 bit full adder circuit capable of very low voltage operation (