An extra low noise 1.8 GHz voltage controlled oscillator in 0.35 SiGe BiCMOS technology

A fully integrated 1.8 GHz low-phase-noise LC-tank voltage controlled oscillator (VCO) has been designed in SiGe BiCMOS technology. The noise performance is partially due to the high Q SiGe thick Metal5 octagonal inductors and n/sup +//n-well on p-substrate varactors used in the LC tank and also due...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Dermentzoglou, L., Kamoulakos, G., Arapoyanni, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Frequency Germanium silicon alloys Inductors MOSFETs Performance loss Phase noise Silicon germanium Varactors Voltage-controlled oscillators
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