An extra low noise 1.8 GHz voltage controlled oscillator in 0.35 SiGe BiCMOS technology

An extra low noise 1.8 GHz voltage controlled oscillator in 0.35 SiGe BiCMOS technology

A fully integrated 1.8 GHz low-phase-noise LC-tank voltage controlled oscillator (VCO) has been designed in SiGe BiCMOS technology. The noise performance is partially due to the high Q SiGe thick Metal5 octagonal inductors and n/sup +//n-well on p-substrate varactors used in the LC tank and also due...

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Bibliographische Detailangaben
Hauptverfasser: Dermentzoglou, L., Kamoulakos, G., Arapoyanni, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Frequency
Germanium silicon alloys
Inductors
MOSFETs
Performance loss
Phase noise
Silicon germanium
Varactors
Voltage-controlled oscillators
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Beschreibung
Zusammenfassung:A fully integrated 1.8 GHz low-phase-noise LC-tank voltage controlled oscillator (VCO) has been designed in SiGe BiCMOS technology. The noise performance is partially due to the high Q SiGe thick Metal5 octagonal inductors and n/sup +//n-well on p-substrate varactors used in the LC tank and also due to the large MOSFETs used in the cross-coupled pair in order to compensate the inductor losses. The phase noise achieved is -120.7 dBc/Hz at an offset frequency of 200 kHz, considering a current consumption of 15 mA, with 3.3 V power supply. The tunability of the structure covers 216 MHz, from 1.612 GHz up to 1.828 GHz.
DOI:10.1109/ICECS.2002.1045340