Light-stimulated ionic etching of semiconductor heterostructures

Light-stimulated ionic etching of semiconductor heterostructures

For study of impurities distribution in film hetero-phase photoresistors the method of the secondary ionic mass-spectrometry was used. Influence of illumination by visible light on an output of ions of cadmium and lead is revealed. It being found that the output of cadmium ions at illumination decre...

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Hauptverfasser: Serdobintsev, A.A., Karasev, S.A., Rokakh, A.G., Stetsura, S.V., Zhukov, A.G.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Gallium arsenide
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Zusammenfassung:For study of impurities distribution in film hetero-phase photoresistors the method of the secondary ionic mass-spectrometry was used. Influence of illumination by visible light on an output of ions of cadmium and lead is revealed. It being found that the output of cadmium ions at illumination decreases, but lead ions increases. The increase of an output of lead ions contacts to that lead contains mainly in the narrow-gap sites of the photoconductor being a drain of photoexcited electron-hole pairs.
DOI:10.1109/APEDE.2002.1044937