Development of a 1 MHz MOSFET gate-driver for integrated converters

A gate-driver capable of switching a MOSFET at 1 MHz is proposed. The main design issues such as propagation delay and pulse width distortion have been addressed. Particular attention has been given to miniaturization of the unit with the aim of integration into an integrated power converter. The design has also focused on extensive protection features for the MOSFET, such as over-current and thermal shutdown. An experimental prototype, which can switch MOSFETs up to 800 V, has been constructed and the results presented.