Characterization of microtrenching on 0.13/spl mu/m NMOS and PMOS transistors using DAHC and edge FN stress

Characterization of microtrenching on 0.13/spl mu/m NMOS and PMOS transistors using DAHC and edge FN stress

The degradation of 0.13/spl mu/m NMOS and PMOS transistors caused by microtrenching (/spl mu/T) under hot-carrier and edge FN stress is studied. DAHC stress was found to be a sensitive technique for characterizing the NMOS transistors while edge FN stress was more suitable for the PMOS transistors....

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Bibliographische Detailangaben
Hauptverfasser: Chua, C.S., Chor, E.F., Ang, C.H., Tan, J., Goh, F., Yu, J., Pradeep, Y., See, A., Chan, L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Drain avalanche hot carrier injection
Electrons
Etching
Ground penetrating radar
Hot carriers
MOS devices
MOSFETs
Stress
Voltage
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Beschreibung
Zusammenfassung:The degradation of 0.13/spl mu/m NMOS and PMOS transistors caused by microtrenching (/spl mu/T) under hot-carrier and edge FN stress is studied. DAHC stress was found to be a sensitive technique for characterizing the NMOS transistors while edge FN stress was more suitable for the PMOS transistors. Interface state generation was also identified as the dominant degradation mechanism.
DOI:10.1109/PPID.2002.1042621