Polarization control of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding

Polarization control of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding

A technique to control the polarization of long-wavelength InGaAsP MQW VCSELs is presented. The active region, grown on [311] InP, is wafer-bonded to [100] GaAs-based mirrors.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Okuno, Y.L., Geske, J., Yi-Jen Chiu, DenBaars, S.P., Bowers, J.E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Distributed Bragg reflectors
Lattices
Mirrors
Optical control
Optical pumping
Polarization
Quantum well devices
Surface emitting lasers
Vertical cavity surface emitting lasers
Wafer bonding
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A technique to control the polarization of long-wavelength InGaAsP MQW VCSELs is presented. The active region, grown on [311] InP, is wafer-bonded to [100] GaAs-based mirrors.
DOI:10.1109/ISLC.2002.1041097