Reliability Improvement in Vertical NAND Flash Cells Using Adaptive Incremental Step Pulse Programming (A-ISPP) and Incremental Step Pulse Erasing (ISPE)

In order to improve the reliability of vertical NAND (V-NAND) flash memory cells, a scheme using adaptive incremental step pulse programming (A-ISPP) and incremental step pulse erasing (ISPE) is proposed. Incremental step pulse programming (ISPP) with adaptive step voltage is used to precisely adjus...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-03, Vol.71 (3), p.1834-1838
Hauptverfasser:	Park, Sung-Ho, Yoo, Ho-Nam, Yang, Yeongheon, Kim, Jae-Joon, Lee, Jong-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	Degradation Electron traps Flash memory (computers) Flash memory cells Incremental step pulse programming (ISPP) Programming Reliability retention Step voltage Tuning vertical NAND (V-NAND) Voltage Vₜₕ distribution
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