Fabrication of photonic crystals in silicon-on-insulator using 248-nm deep UV lithography

Fabrication of photonic crystals in silicon-on-insulator using 248-nm deep UV lithography

We demonstrate wavelength-scale photonic nanostructures, including photonic crystals, fabricated in silicon-on-insulator using deep ultraviolet (UV) lithography. We discuss the mass-manufacturing capabilities of deep UV lithography compared to e-beam lithography. This is illustrated with experimenta...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2002-07, Vol.8 (4), p.928-934
Hauptverfasser: Bogaerts, W., Wiaux, V., Taillaert, D., Beckx, S., Luyssaert, B., Bienstman, P., Baets, R.
Format: Artikel
Sprache:eng
Schlagworte:
III-V semiconductor materials
Integrated circuits
Lithography
Nanocomposites
Nanomaterials
Nanostructure
Optical device fabrication
Optical fiber communication
Optical films
Optical refraction
Optical waveguides
Photonic crystals
Photonic integrated circuits
Photonics
Quantum electronics
Silicon on insulator technology
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Beschreibung
Zusammenfassung:We demonstrate wavelength-scale photonic nanostructures, including photonic crystals, fabricated in silicon-on-insulator using deep ultraviolet (UV) lithography. We discuss the mass-manufacturing capabilities of deep UV lithography compared to e-beam lithography. This is illustrated with experimental results. Finally, we present some of the issues that arise when trying to use established complementary metal-oxide-semiconductor processes for the fabrication of photonic integrated circuits.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2002.800845