GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy

High-efficiency optical emission past 1.3 /spl mu/m of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap, wavelen...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2002-07, Vol.8 (4), p.795-800
Hauptverfasser:	Gambin, V., Wonill Ha, Wistey, M., Homan Yuen, Bank, S.R., Kim, S.M., Harris, J.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitive sensors Gallium arsenide Laser theory Molecular beam epitaxial growth Optical surface waves Photonic band gap Stimulated emission Surface emitting lasers Tensile strain Vertical cavity surface emitting lasers
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