GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy
High-efficiency optical emission past 1.3 /spl mu/m of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap, wavelen...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2002-07, Vol.8 (4), p.795-800 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Gambin, V. Wonill Ha Wistey, M. Homan Yuen Bank, S.R. Kim, S.M. Harris, J.S. |
| description | High-efficiency optical emission past 1.3 /spl mu/m of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap, wavelengths are actually limited by the N solubility limit and the high In strain limit. By adding Sb to the GaInNAs quaternary, we have observed a remarkable shift toward longer luminescent wavelengths while maintaining high intensity. The increase in strain of these new alloys necessitates the use of tensile strain compensating GaNAs barriers around quantum-well (QW) structures. With the incorporation of Sb and using In concentrations as high as 40%, high-intensity photoluminescence (PL) was observed as long as 1.6 /spl mu/m. PL at 1.5 /spl mu/m was measured with peak intensity over 50% of the best 1.3 /spl mu/m GaInNAs samples grown. Three QW GaIn-NAsSb in-plane lasers were fabricated with room-temperature pulsed operation out to 1.49 /spl mu/m. |
| doi_str_mv | 10.1109/JSTQE.2002.800843 |
| format | Article |
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While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap, wavelengths are actually limited by the N solubility limit and the high In strain limit. By adding Sb to the GaInNAs quaternary, we have observed a remarkable shift toward longer luminescent wavelengths while maintaining high intensity. The increase in strain of these new alloys necessitates the use of tensile strain compensating GaNAs barriers around quantum-well (QW) structures. With the incorporation of Sb and using In concentrations as high as 40%, high-intensity photoluminescence (PL) was observed as long as 1.6 /spl mu/m. PL at 1.5 /spl mu/m was measured with peak intensity over 50% of the best 1.3 /spl mu/m GaInNAs samples grown. Three QW GaIn-NAsSb in-plane lasers were fabricated with room-temperature pulsed operation out to 1.49 /spl mu/m.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2002.800843</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitive sensors ; Gallium arsenide ; Laser theory ; Molecular beam epitaxial growth ; Optical surface waves ; Photonic band gap ; Stimulated emission ; Surface emitting lasers ; Tensile strain ; Vertical cavity surface emitting lasers</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.795-800</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1039471$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27915,27916,54749</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1039471$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gambin, V.</creatorcontrib><creatorcontrib>Wonill Ha</creatorcontrib><creatorcontrib>Wistey, M.</creatorcontrib><creatorcontrib>Homan Yuen</creatorcontrib><creatorcontrib>Bank, S.R.</creatorcontrib><creatorcontrib>Kim, S.M.</creatorcontrib><creatorcontrib>Harris, J.S.</creatorcontrib><title>GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>High-efficiency optical emission past 1.3 /spl mu/m of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. 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Three QW GaIn-NAsSb in-plane lasers were fabricated with room-temperature pulsed operation out to 1.49 /spl mu/m.</description><subject>Capacitive sensors</subject><subject>Gallium arsenide</subject><subject>Laser theory</subject><subject>Molecular beam epitaxial growth</subject><subject>Optical surface waves</subject><subject>Photonic band gap</subject><subject>Stimulated emission</subject><subject>Surface emitting lasers</subject><subject>Tensile strain</subject><subject>Vertical cavity surface emitting lasers</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9isuKwjAUQIPMgK_5AJnN_YGkN33YuhTxuRBEkdmVdLitHZK2JL769yq4ntU5cA5jI4lCSpx4m_1hNxc-oi8SxCQMOqwnoyjhYRT6H0_HOOb-GH-6rO_cH76eBHvsuFTrajt1-wzy2oIUAZdizD3XaDAXz3BdVwXc1JU0VcX5BFo5sg4KW98qyFowtabfi1YWMlIGqCnP6t4O2WeutKOvNwfsezE_zFa8JKK0saVRtk0lBpMwlsH_9QF2pkAz</recordid><startdate>200207</startdate><enddate>200207</enddate><creator>Gambin, V.</creator><creator>Wonill Ha</creator><creator>Wistey, M.</creator><creator>Homan Yuen</creator><creator>Bank, S.R.</creator><creator>Kim, S.M.</creator><creator>Harris, J.S.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>200207</creationdate><title>GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy</title><author>Gambin, V. ; Wonill Ha ; Wistey, M. ; Homan Yuen ; Bank, S.R. ; Kim, S.M. ; Harris, J.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_10394713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Capacitive sensors</topic><topic>Gallium arsenide</topic><topic>Laser theory</topic><topic>Molecular beam epitaxial growth</topic><topic>Optical surface waves</topic><topic>Photonic band gap</topic><topic>Stimulated emission</topic><topic>Surface emitting lasers</topic><topic>Tensile strain</topic><topic>Vertical cavity surface emitting lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gambin, V.</creatorcontrib><creatorcontrib>Wonill Ha</creatorcontrib><creatorcontrib>Wistey, M.</creatorcontrib><creatorcontrib>Homan Yuen</creatorcontrib><creatorcontrib>Bank, S.R.</creatorcontrib><creatorcontrib>Kim, S.M.</creatorcontrib><creatorcontrib>Harris, J.S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gambin, V.</au><au>Wonill Ha</au><au>Wistey, M.</au><au>Homan Yuen</au><au>Bank, S.R.</au><au>Kim, S.M.</au><au>Harris, J.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2002-07</date><risdate>2002</risdate><volume>8</volume><issue>4</issue><spage>795</spage><epage>800</epage><pages>795-800</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>High-efficiency optical emission past 1.3 /spl mu/m of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap, wavelengths are actually limited by the N solubility limit and the high In strain limit. By adding Sb to the GaInNAs quaternary, we have observed a remarkable shift toward longer luminescent wavelengths while maintaining high intensity. The increase in strain of these new alloys necessitates the use of tensile strain compensating GaNAs barriers around quantum-well (QW) structures. With the incorporation of Sb and using In concentrations as high as 40%, high-intensity photoluminescence (PL) was observed as long as 1.6 /spl mu/m. PL at 1.5 /spl mu/m was measured with peak intensity over 50% of the best 1.3 /spl mu/m GaInNAs samples grown. Three QW GaIn-NAsSb in-plane lasers were fabricated with room-temperature pulsed operation out to 1.49 /spl mu/m.</abstract><pub>IEEE</pub><doi>10.1109/JSTQE.2002.800843</doi></addata></record> |
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| subjects | Capacitive sensors Gallium arsenide Laser theory Molecular beam epitaxial growth Optical surface waves Photonic band gap Stimulated emission Surface emitting lasers Tensile strain Vertical cavity surface emitting lasers |
| title | GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy |
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