400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
The 400-nm In/sub 0.05/Ga/sub 0.95/N-GaN MQW light-emitting diode (LED) structure and In/sub 0.05/Ga/sub 0.95/N-Al/sub 0.1/Ga/sub 0.9/N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al/sub 0.1/Ga/sub 0.9/N as the material for barrier layers woul...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2002-07, Vol.8 (4), p.744-748 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Chang, S.J. Kuo, C.H. Su, Y.K. Wu, L.W. Sheu, J.K. Wen, T.C. Lai, W.C. Chen, J.R. Tsai, J.M. |
| description | The 400-nm In/sub 0.05/Ga/sub 0.95/N-GaN MQW light-emitting diode (LED) structure and In/sub 0.05/Ga/sub 0.95/N-Al/sub 0.1/Ga/sub 0.9/N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al/sub 0.1/Ga/sub 0.9/N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current. |
| doi_str_mv | 10.1109/JSTQE.2002.801677 |
| format | Article |
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It was found that the use of Al/sub 0.1/Ga/sub 0.9/N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2002.801677</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitride ; Barrier layers ; Carrier confinement ; Crystalline materials ; Crystals ; Current carriers ; Degradation ; Electroluminescence ; Epitaxial growth ; Epitaxial layers ; Injection current ; Leakage current ; Light emitting diodes ; Quantum well devices ; Vapor phase epitaxy</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.744-748</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-b77afc75fcf56846940748c94135f22d5649c4e4b0985ddf494188d42b7b9d1d3</citedby><cites>FETCH-LOGICAL-c384t-b77afc75fcf56846940748c94135f22d5649c4e4b0985ddf494188d42b7b9d1d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1039466$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1039466$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chang, S.J.</creatorcontrib><creatorcontrib>Kuo, C.H.</creatorcontrib><creatorcontrib>Su, Y.K.</creatorcontrib><creatorcontrib>Wu, L.W.</creatorcontrib><creatorcontrib>Sheu, J.K.</creatorcontrib><creatorcontrib>Wen, T.C.</creatorcontrib><creatorcontrib>Lai, W.C.</creatorcontrib><creatorcontrib>Chen, J.R.</creatorcontrib><creatorcontrib>Tsai, J.M.</creatorcontrib><title>400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>The 400-nm In/sub 0.05/Ga/sub 0.95/N-GaN MQW light-emitting diode (LED) structure and In/sub 0.05/Ga/sub 0.95/N-Al/sub 0.1/Ga/sub 0.9/N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al/sub 0.1/Ga/sub 0.9/N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.</description><subject>Aluminum gallium nitride</subject><subject>Barrier layers</subject><subject>Carrier confinement</subject><subject>Crystalline materials</subject><subject>Crystals</subject><subject>Current carriers</subject><subject>Degradation</subject><subject>Electroluminescence</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>Injection current</subject><subject>Leakage current</subject><subject>Light emitting diodes</subject><subject>Quantum well devices</subject><subject>Vapor phase epitaxy</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkU1Lw0AQhoMoWKs_QLwED3pKnd3Mfh1LqW2lKGIFb0ua3dSUfLTZBPHfu7U9iAfxMMy8zDPDDG8QXBIYEALq7uFl8TweUAA6kEC4EEdBjzAmI2RIj30NQkSUw9tpcObcGgAkSugFUwSIqjKcVZPkMfIRJpU5qGGx02VXtPm2S6q2K8MPWxRhka_e28iWedvm1So0eW2sOw9OsqRw9uKQ-8Hr_Xgxmkbzp8lsNJxHaSyxjZZCJFkqWJZmjEvkCkGgTBWSmGWUGsZRpWhxCUoyYzL0HSkN0qVYKkNM3A9u93s3Tb3trGt1mbvUn5VUtu6cViAUI0DAkzd_klRyJmKG_wAJMn-tB69_geu6ayr_rlaKSsFjIB4ieyhtaucam-lNk5dJ86kJ6J1X-tsrvfNK773yM1f7mdxa-4OPFXIefwGw04yM</recordid><startdate>20020701</startdate><enddate>20020701</enddate><creator>Chang, S.J.</creator><creator>Kuo, C.H.</creator><creator>Su, Y.K.</creator><creator>Wu, L.W.</creator><creator>Sheu, J.K.</creator><creator>Wen, T.C.</creator><creator>Lai, W.C.</creator><creator>Chen, J.R.</creator><creator>Tsai, J.M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20020701</creationdate><title>400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes</title><author>Chang, S.J. ; Kuo, C.H. ; Su, Y.K. ; Wu, L.W. ; Sheu, J.K. ; Wen, T.C. ; Lai, W.C. ; Chen, J.R. ; Tsai, J.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-b77afc75fcf56846940748c94135f22d5649c4e4b0985ddf494188d42b7b9d1d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Aluminum gallium nitride</topic><topic>Barrier layers</topic><topic>Carrier confinement</topic><topic>Crystalline materials</topic><topic>Crystals</topic><topic>Current carriers</topic><topic>Degradation</topic><topic>Electroluminescence</topic><topic>Epitaxial growth</topic><topic>Epitaxial layers</topic><topic>Injection current</topic><topic>Leakage current</topic><topic>Light emitting diodes</topic><topic>Quantum well devices</topic><topic>Vapor phase epitaxy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chang, S.J.</creatorcontrib><creatorcontrib>Kuo, C.H.</creatorcontrib><creatorcontrib>Su, Y.K.</creatorcontrib><creatorcontrib>Wu, L.W.</creatorcontrib><creatorcontrib>Sheu, J.K.</creatorcontrib><creatorcontrib>Wen, T.C.</creatorcontrib><creatorcontrib>Lai, W.C.</creatorcontrib><creatorcontrib>Chen, J.R.</creatorcontrib><creatorcontrib>Tsai, J.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chang, S.J.</au><au>Kuo, C.H.</au><au>Su, Y.K.</au><au>Wu, L.W.</au><au>Sheu, J.K.</au><au>Wen, T.C.</au><au>Lai, W.C.</au><au>Chen, J.R.</au><au>Tsai, J.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2002-07-01</date><risdate>2002</risdate><volume>8</volume><issue>4</issue><spage>744</spage><epage>748</epage><pages>744-748</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>The 400-nm In/sub 0.05/Ga/sub 0.95/N-GaN MQW light-emitting diode (LED) structure and In/sub 0.05/Ga/sub 0.95/N-Al/sub 0.1/Ga/sub 0.9/N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al/sub 0.1/Ga/sub 0.9/N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSTQE.2002.801677</doi><tpages>5</tpages></addata></record> |
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| subjects | Aluminum gallium nitride Barrier layers Carrier confinement Crystalline materials Crystals Current carriers Degradation Electroluminescence Epitaxial growth Epitaxial layers Injection current Leakage current Light emitting diodes Quantum well devices Vapor phase epitaxy |
| title | 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes |
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