Physical characterization of high-k gate dielectric film systems processed by RTA and spike anneal

As complimentary metal oxide semiconductor (CMOS) devices continue to scale with the rapid performance pace of Moore's Law, gate dielectric materials with significantly higher dielectric constants (k=10-25) are being investigated as potential replacements for silicon dioxide, SiO/sub 2/ (k=3.9)...

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Bibliographische Detailangaben

Hauptverfasser:	Lyaaght, P.S., Foran, B., Bersuker, G., Tichy, R., Larson, L., Murto, R.W., Huff, H.R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Atomic force microscopy Dielectric materials Hafnium High-K gate dielectrics Mass spectroscopy Moore's Law Scanning electron microscopy Semiconductor films Transmission electron microscopy
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