Realization of High Photovoltaic Efficiency Devices With Sb } S } Absorber Layer

This study investigates the impact of substrate temperature ( \textit{T}_{\text{sub}}\text{)} on the structural, optical, and electrical properties of dual ion beam sputtering (DIBS)-grown Sb _{\text{2}} S _{\text{3}} thin films. \textit{T}_{\text{sub}} has been systematically varied from room temperature (RT) to 300 ^{\circ} C. X-ray diffraction (XRD) investigation demonstrates the high crystalline quality of the Sb _{\text{2}} S _{\text{3}} thin films, revealing an orthorhombic structure with a characteristic diffraction peak corresponding to (211) plane observed at 28.4 ^{\circ} . The field-emission scanning electron microscopy (FESEM) images illustrate that the growth of thin film at 200 ^{\circ} C yields the largest grain size, measuring 62 nm, along with homogeneous and distinct grain morphology. In-depth optical analysis using spectroscopic ellipsometry (SE) with a three-layer model fitting technique indicates a high absorption coefficient (10 ^{\text{5}} cm ^{-\text{1}}\text{)} in the UV-VIS spectral region, while the films exhibit direct bandgap values ranging from 1.6 to 2.3 eV. The electrical resistivity and mobility of the Sb _{\text{2}} S _{\text{3}} films are evaluated at RT through four-probe Hall measurements, confirming the stable, repeatable, and reliable p-type electrical conductivity. In addition, the analysis of the p-Sb _{\text{2}} S _{\text{3}} /n-Si junction demonstrates an exce