Strong blue emission from isoelectronically P-doped GaN epilayers grown by gas source molecular beam epitaxy

Strong blue emission from isoelectronically P-doped GaN epilayers grown by gas source molecular beam epitaxy

The GaN-rich side of GaP/sub x/N/sub 1-x/ alloy exhibits a potentially large bandgap bowing with only a small amount of P incorporation. As a result, there could be interesting device applications. GaN:P layers were grown by molecular beam epitaxy (MBE) on GaN template layers grown by metalorganic c...

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Bibliographische Detailangaben
Hauptverfasser: Juang, F.S., Hong, Y.G., Kim, M.H., Simpkins, B., Tu, C.W., Tsai, J., Lai, W.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical vapor deposition
Computer industry
Drives
Epitaxial growth
Gallium nitride
Gas industry
Lattices
Luminescence
Molecular beam epitaxial growth
Photonic band gap
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Zusammenfassung:The GaN-rich side of GaP/sub x/N/sub 1-x/ alloy exhibits a potentially large bandgap bowing with only a small amount of P incorporation. As a result, there could be interesting device applications. GaN:P layers were grown by molecular beam epitaxy (MBE) on GaN template layers grown by metalorganic chemical vapor deposition. GaP was used as the phosphorus source, P/sub 2/, and the N/sub 2/ plasma as the nitrogen source.
DOI:10.1109/MBE.2002.1037834