Properties of metamorphic materials and device structures on GaAs substrates

Properties of metamorphic materials and device structures on GaAs substrates

In this work, the structural, optical, and electrical properties of metamorphic films are examined and compared to non-metamorphic films. Results for electrical and optical devices are presented. Finally the reliability of metamorphic HEMTs is examined.

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Bibliographische Detailangaben
Hauptverfasser: Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Jang, J.H., Adesida, I., Chang, K.L., Hsieh, K.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Buffer layers
Costs
Gallium arsenide
Indium phosphide
Laboratories
Lattices
mHEMTs
Optical films
Rough surfaces
Substrates
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Beschreibung
Zusammenfassung:In this work, the structural, optical, and electrical properties of metamorphic films are examined and compared to non-metamorphic films. Results for electrical and optical devices are presented. Finally the reliability of metamorphic HEMTs is examined.
DOI:10.1109/MBE.2002.1037763