Diagonal and vertical far-infrared transitions from quantum cascade emitters

Diagonal and vertical far-infrared transitions from quantum cascade emitters

We report a study of a far-infrared GaAs-Al/sub 0.15/Ga/sub 0.85/As quantum cascade electro-luminescence device designed to emit via both diagonal and vertical transitions. Each type of transition was preferentially chosen by varying the applied electric field. The different transitions were identif...

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Hauptverfasser: Dhillon, S.S., Davies, A.G., Arnone, D.D., Beere, H.E., Ritchie, D.A., Linfield, E.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Contact resistance
Electric variables
Electroluminescent devices
Helium
Optical scattering
Particle scattering
Phonons
Quantum cascade lasers
Stimulated emission
Temperature
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Zusammenfassung:We report a study of a far-infrared GaAs-Al/sub 0.15/Ga/sub 0.85/As quantum cascade electro-luminescence device designed to emit via both diagonal and vertical transitions. Each type of transition was preferentially chosen by varying the applied electric field. The different transitions were identified by correlation with bandstructure calculations, electrical characteristics and the width of the peaks. Further, the importance of contact resistance on the spectra was shown.
DOI:10.1109/THZ.2002.1037601