Terahertz intersubband emission from silicon-germanium quantum cascades

Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si/sub 0.76...

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Hauptverfasser:	Kelsall, R.W., Ikonic, Z., Harrison, P., Lynch, S.A., Bates, R., Paul, D.J., Norris, D.J., San Lin Liew, Cullis, A.G., Robbins, D.J., Murzyn, P., Pidgeon, C.R., D Arnone, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Frequency Germanium silicon alloys Light scattering Particle scattering Phonons Quantum cascade lasers Silicon germanium Substrates Surface emitting lasers Vertical cavity surface emitting lasers
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Zusammenfassung:	Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si/sub 0.76/Ge/sub 0.24//Si heterostructures grown on a Si/sub 0.8/Ge/sub 0.2/ relaxed buffer or 'virtual substrate'.
DOI:	10.1109/THZ.2002.1037575