Comprehensive study of multiband unconditional stabilization of common-source and common-gate MESFET transistors using feedback

The use of a new feedback scheme to achieve unconditionally stable MESFET transistors from 0 GHz until cutoff is presented. The methodology is applied for both common-source and common-gate MESFET transistor configurations. Analytical formulation of the stabilization methodology is presented. In add...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2002-10, Vol.37 (10), p.1260-1270
Hauptverfasser:	Hammad, H.F., Freundorfer, A.P., Antar, Y.M.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Character generation Circuits Coplanar waveguides Cutoff frequency Feedback Feedback amplifiers Impedance Loaded antennas Mathematical analysis MESFETs Methodology MMICs Semiconductor devices Stability Stabilization Testing Transistors
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container_end_page	1270
container_issue	10
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container_title	IEEE journal of solid-state circuits
container_volume	37
creator	Hammad, H.F. Freundorfer, A.P. Antar, Y.M.M.
description	The use of a new feedback scheme to achieve unconditionally stable MESFET transistors from 0 GHz until cutoff is presented. The methodology is applied for both common-source and common-gate MESFET transistor configurations. Analytical formulation of the stabilization methodology is presented. In addition, two coplanar-waveguide-based amplifiers were designed to operate at Ka-band, monolithically fabricated, and tested, thus, verifying the methodology. The study includes the effects of the bias change on the feedback amplifier stability performance.
doi_str_mv	10.1109/JSSC.2002.803016
format	Article
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subjects	Character generation Circuits Coplanar waveguides Cutoff frequency Feedback Feedback amplifiers Impedance Loaded antennas Mathematical analysis MESFETs Methodology MMICs Semiconductor devices Stability Stabilization Testing Transistors
title	Comprehensive study of multiband unconditional stabilization of common-source and common-gate MESFET transistors using feedback
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