Comprehensive study of multiband unconditional stabilization of common-source and common-gate MESFET transistors using feedback

The use of a new feedback scheme to achieve unconditionally stable MESFET transistors from 0 GHz until cutoff is presented. The methodology is applied for both common-source and common-gate MESFET transistor configurations. Analytical formulation of the stabilization methodology is presented. In add...

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Veröffentlicht in:IEEE journal of solid-state circuits 2002-10, Vol.37 (10), p.1260-1270
Hauptverfasser: Hammad, H.F., Freundorfer, A.P., Antar, Y.M.M.
Format: Artikel
Sprache:eng
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Zusammenfassung:The use of a new feedback scheme to achieve unconditionally stable MESFET transistors from 0 GHz until cutoff is presented. The methodology is applied for both common-source and common-gate MESFET transistor configurations. Analytical formulation of the stabilization methodology is presented. In addition, two coplanar-waveguide-based amplifiers were designed to operate at Ka-band, monolithically fabricated, and tested, thus, verifying the methodology. The study includes the effects of the bias change on the feedback amplifier stability performance.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2002.803016