Comprehensive study of multiband unconditional stabilization of common-source and common-gate MESFET transistors using feedback
The use of a new feedback scheme to achieve unconditionally stable MESFET transistors from 0 GHz until cutoff is presented. The methodology is applied for both common-source and common-gate MESFET transistor configurations. Analytical formulation of the stabilization methodology is presented. In add...
Gespeichert in:
Veröffentlicht in: | IEEE journal of solid-state circuits 2002-10, Vol.37 (10), p.1260-1270 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The use of a new feedback scheme to achieve unconditionally stable MESFET transistors from 0 GHz until cutoff is presented. The methodology is applied for both common-source and common-gate MESFET transistor configurations. Analytical formulation of the stabilization methodology is presented. In addition, two coplanar-waveguide-based amplifiers were designed to operate at Ka-band, monolithically fabricated, and tested, thus, verifying the methodology. The study includes the effects of the bias change on the feedback amplifier stability performance. |
---|---|
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2002.803016 |