Modeling of CMOS Integrated Strain Sensors and Sensitivity Enhanced Readout Architecture

Integrating sensors within a complete readout system on a single die has become essential to the More-than-Moore philosophy. Mechanical stress, as one of the physical quantities of potential interest, provides various information from simple static to dynamic load. Integration of piezoresistive elem...

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Veröffentlicht in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2024-02, Vol.71 (2), p.1-12
Hauptverfasser: Allinger, Kim, Bahr, Andreas, Kuhl, Matthias
Format: Artikel
Sprache:eng
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Zusammenfassung:Integrating sensors within a complete readout system on a single die has become essential to the More-than-Moore philosophy. Mechanical stress, as one of the physical quantities of potential interest, provides various information from simple static to dynamic load. Integration of piezoresistive elements within a complete CMOS system has been achieved in many ways, and ground-laying effects have been studied and described in detail. To bring the mechanical and electrical domains closer together, a new concept is presented that allows an analytical and simulation-based approximation of the sensors' behavior due to applied mechanical stress as part of established concepts in electronics. It is evaluated based on measured state-of-the-art sensor implementations and used to bring up an alternative architecture with enhanced and on-the-fly adaptive sensitivity. Simulations are used to then further evaluate any model errors due to second-order effects that have been neglected within the design process.
ISSN:1549-8328
1558-0806
DOI:10.1109/TCSI.2023.3339224