Memories of tomorrow

Memories of tomorrow

With the promise of nonvolatility, practically infinite write endurance, and short read and write times, magnetic tunnel junction magnetic random access memory could become a future mainstream memory technology.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE circuits and devices magazine 2002-09, Vol.18 (5), p.17-27
Hauptverfasser: Reohr, W., Viehmann, H., Scheuerlein, R., Li-Kong Wang, Trouilloud, P., Parkin, S., Gallagher, W., Muller, G., Honigschmid, H., Robertazzi, R., Gogl, D., Pesavento, F., Lammers, S., Lewis, K., Arndt, C., Yu Lu
Format: Artikel
Sprache:eng
Schlagworte:
Anisotropic magnetoresistance
CMOS technology
Current measurement
DC generators
Giant magnetoresistance
Induction generators
Magnetic anisotropy
Magnetic circuits
Magnetic tunneling
Perpendicular magnetic anisotropy
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Beschreibung
Zusammenfassung:With the promise of nonvolatility, practically infinite write endurance, and short read and write times, magnetic tunnel junction magnetic random access memory could become a future mainstream memory technology.
ISSN:8755-3996
1558-1888
DOI:10.1109/MCD.2002.1035347